| PART |
Description |
Maker |
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips
|
| BF908WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF908WR BF908WR_1 |
N-channel dual-gate MOS-FET
From old datasheet system
|
Philips
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF1206F |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
NXP Semiconductors
|
| 3SK317 |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| 3SK295ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| 3SK296ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82A, CMPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
